Semiconductor integrated circuits having bipolar transistors and

Details Semiconductor integrated circuits having bipolar transistors and Semiconductor integrated circuits having bipolar transistors and

1996-06-13

1997-02-25

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257382, 257412, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

056061927

ABSTRACT:
A semiconductor IC comprises an LDD-MOSFET and a bipolar transistor both formed on a common semiconductor substrate. A gate electrode of the MOSFET has a laminated structure including a polysilicon layer, a tungsten silicide layer and another polysilicon layer consecutively formed. The top polysilicon layer functions for protecting the tungsten silicide layer so that tungsten is not back-sputtered to deposit particulates on a base region of the bipolar transistor during an anisotropic etching step for forming sidewall spacers of the gate electrode. Accordingly, a sputter-etch cleaning step for removing tungsten particulates out of the base region is omitted. A BiCMOS IC having an LDD structure and comprising a bipolar transistor with required performance can be manufactured by a simple process.

REFERENCES:
patent: 4808548 (1989-02-01), Thomas et al.
patent: 4949136 (1990-08-01), Jain
patent: 5319234 (1994-06-01), Uga et al.

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