Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-03-18
1994-05-24
Ngo, Ngan
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257401, 257903, 257904, H01L 2710, H01L 2715, H01L 2702
Patent
active
053151461
ABSTRACT:
A semiconductor memory device includes a gate region of each driver transistor arranged obliquely with respect to a first direction of a chip; a source/drain region of each driver transistor arranged obliquely with respect to the first direction; contact windows arranged substantially straight with respect to the first direction and connecting each source/drain region of the driver transistors to a power supply line provided in the first direction; and contact windows arranged every one contact window in a zigzag manner with respect to the first direction and connecting each source/drain region of transfer gate transistors to a corresponding bit line. By the constitution, it is possible to reduce an area of memory cell regions resulting in a reduction in a chip area, and to cause respective driver transistors to have uniform characteristics and thus improve an operation reliability thereof.
REFERENCES:
patent: 4322824 (1982-03-01), Allan
Fujitsu Limited
Ngo Ngan
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