Semiconductor memory device having a double-stacked capacitor st

Details Semiconductor memory device having a double-stacked capacitor st Semiconductor memory device having a double-stacked capacitor st

1993-09-16

1994-05-24

Limanek, Robert

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257306, 257385, H01L 2994

Patent

active

053151410

ABSTRACT:
A semiconductor memory device having a double-stacked capacitor, and methods for manufacturing the same, are disclosed. Such memory device has a first stacked capacitor and a second stacked capacitor, which are formed respectively over and below a bit line and run in parallel and are connected in order to increase the capacity of the capacitors and to prevent contact faults caused by a step occurring.

REFERENCES:
patent: 4953126 (1990-08-01), Ema
patent: 4974040 (1990-11-01), Taguchi et al.
patent: 5006481 (1991-04-01), Chan et al.
patent: 5059548 (1991-10-01), Kim
patent: 5126280 (1992-06-01), Chan et al.

Affiliated with

Also associated with

Rating

Semiconductor memory device having a double-stacked capacitor st does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device having a double-stacked capacitor st, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device having a double-stacked capacitor st will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1974727