Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1996-01-31

1997-02-25

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566511, 1566531, 437228, H01L 213065

Patent

active

056056010

ABSTRACT:
A method of manufacturing a semiconductor device is obtained by which a desired pattern is formed, high yield of semiconductor devices can be achieved and the number of steps employed and hence production cost can be reduced. In the method of manufacturing a semiconductor device, a titanium silicide film and part of a polysilicon film are anisotropically etched under the conditions of Cl.sub.2 /NF.sub.3 =40/20 sccm and a gas pressure of 1.2 mTorr. Then, polysilicon film is anisotropically etched using a mixed gas of Cl.sub.2 and O.sub.2. NF.sub.3 completely dissociates. Nitrogen atoms serve as a strong protecting film for a sidewall of the pattern so that side-etching does not occur, thereby providing a desired pattern shape. Since each film is etched in the same device, the number of steps employed and hence production cost can be reduced. Furthermore, production of foreign particles can be reduced and hence high yield of semiconductor devices can be achieved.

REFERENCES:
patent: 5164330 (1992-11-01), Davis et al.
patent: 5228950 (1993-07-01), Webb et al.
patent: 5397962 (1995-03-01), Moslehi
patent: 5441914 (1995-08-01), Taft et al.

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