Method of generating plasma having high ion density for substrat

Details Method of generating plasma having high ion density for substrat Method of generating plasma having high ion density for substrat

1995-02-17

1997-02-25

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566461, B44C 122

Patent

active

056055994

ABSTRACT:
An induction plasma source for integrated circuit fabrication includes a hemispherically shaped induction coil in an expanding spiral pattern about the vacuum chamber containing a semiconductor wafer supported by a platen. The windings of the induction coil follow the contour of a hemispherically shaped quartz bell jar, which holds the vacuum. The power source is a low frequency rf source having a frequency of about 450 KHz and a power in the range of 200-2000 Watts, and the pressure is a low pressure of about 0.1-100 mTorr. A high frequency rf source independently adjusts the bias voltage on the wafer.

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