Process for etching a multi-layer substrate

Details Process for etching a multi-layer substrate Process for etching a multi-layer substrate

1992-06-25

1994-05-24

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156657, 156656, 156653, 156652, H01L 2100

Patent

active

053145780

ABSTRACT:
A carbon-containing, chemical etchant protective patterned layer is formed on a multi-layer substrate including a silicon dioxide layer formed on an underlying silicon or metal silicide layer by providing a predetermined pattern defining a plurality of openings in the carbon-containing, chemical etchant protective patterned layer. Next, the plurality of exposed areas of the major surface of the silicon dioxide structural layer are selectively etched with a substantially carbon-free chemical etchant system. These materials form a polyhalocarbon material in the presence of a carbon-containing material. Thus, since the chemical etchant protective patterned layer is carbon-containing, a localized polyhalocarbon deposition can be affected, at high selectivity conditions, by adding the carbon-free chemical etchant system in the presence of the protective patterned layer. More specifically, the hydrogen-containing material reacts with the carbon-free, halogen-containing material and the carbon-containing, chemical etchant protective patterned layer to selectively form in situ, at the point of interaction thereof, a polyhalocarbon protective coating layer on the silicon dioxide structural layer.

REFERENCES:
patent: 4465552 (1984-08-01), Bobbio et al.
patent: 4734157 (1988-03-01), Carbaugh
patent: 4904338 (1990-02-01), Kozicki

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