Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-06-24
1998-05-26
Monin, Donald
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257351, 257408, 257 59, H01L 2701, H01L 2976
Patent
active
057570485
ABSTRACT:
A thin film transistor which can improve such electric characteristics as off current characteristics, and a manufacturing method of a thin film transistor. A thin film transistor (110) has an n.sup.- source area (112) and an n.sup.- drain area (113) consisting of an n.sup.- silicon film (low concentration area) of about 400 .ANG., which is a silicon film made by performing a crystallization treatment such as an SPC method on an amorphous silicon, and the crystallization treatment is carried out after the implantation of impurities to activate the impurities at the same time. A gate electrode (116) is a metal electrode, and is formed after an n.sup.- source area (112) and an n.sup.- drain area (113) are formed. A gate electrode (116), an n.sup.- source area (112) and an n.sup.- drain area (113) are not formed self-alignedly.
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IEEE Electron Device Letters, vol. 9, No. 1, 1 Jan. 1988 New York US pp. 23-25, K. Tanaka `Characteristics of Offset-Structure polycrystalline silicon thin film transistors` *p. 23, right col.; figure 1*.
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Monin Donald
Seiko Epson Corporation
Watson Mark P.
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