MOS type semiconductor device

Details MOS type semiconductor device MOS type semiconductor device

1996-08-02

1998-05-26

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257341, 257139, 257487, 257345, 257401, H01L 2978, H01L 29739

Patent

active

057570469

ABSTRACT:
The invention improves the withstand voltage and avalanche withstand capability of a MOSFET, by preventing avalanche currents from localizing to the corners of the quadrangular cells of a MOSFET. The MOSFET includes a square channel region of the second conductivity type formed in a surface layer of a semiconductor substrate of the first conductivity type, a well region of high impurity concentration formed in the central portion of the channel region, a source region of the first conductivity type formed in a surface layer of the well region, and a MOS structure formed on the surface of the above described constituents. The cell structure, in which a diagonal of the square channel region and a diagonal of the nearest neighboring channel regions lie on a line, narrows a spacing between the corners of the neighboring channel regions to encourage pinch-off of a depletion layer and suppresses localization of avalanche currents to the corners of the channel regions. By connecting the corner of the neighboring channel regions with stripe regions of high resistivity, the depletion layer expands more easily.

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