Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1999-11-04
2000-10-24
Smith, Matthew
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438659, 438584, 438592, 438605, 438627, 438643, 438661, H01L 2144
Patent
active
061367087
ABSTRACT:
A barrier film 5 such as silicon oxide film or the like is formed on the back surface of a semiconductor substrate. Then, a copper-based metal film is formed on the principal surface of the semiconductor substrate. (Selected Drawing: FIG. 2)
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NEC Corporation
Smith Matthew
Yevsikov Victor
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