Methods for forming phosphorus- and/or boron-containing silica l

Details Methods for forming phosphorus- and/or boron-containing silica l Methods for forming phosphorus- and/or boron-containing silica l

1998-09-03

2000-10-24

Tsai, Jey

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438790, 438794, H01L 2144, H01L 2131, H01L 21469

Patent

active

061367036

ABSTRACT:
A method of forming a phosphorus- and/or boron-containing silica layer, such as a PSG, BSG, or BPSG layer, on a substrate, such as a semiconductor substrate or substrate assembly.

REFERENCES:
patent: 5532193 (1996-07-01), Maeda et al.
patent: 5759923 (1998-06-01), McMillan et al.
patent: 5915200 (1999-06-01), Tokumasu et al.
Dobson et al., "Advanced SiO.sub.2 Planarization Using Silane and H.sub.2 O.sub.2," Semiconductor International, 85-86, 88, Dec., 1994.
Gaillard et al., "Silicon dioxide chemical vapor deposition using silane and hydrogen peroxide," J. Vac. Sci. Technol. B., 14(4), 2767-2769 (1996).
Versteeg et al., "Metalorganic Chemical Vapor Deposition by Pulsed Liquid Injection Using An Ultrasonic Nozzle: Titanium Dioxide on Sapphire from Titanium (IV) Isopropoxide," J. of the American Ceramic Society, 78, 2763-2768 (1995).

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