Method of manufacturing semiconductor device using phase transit

Details Method of manufacturing semiconductor device using phase transit Method of manufacturing semiconductor device using phase transit

1998-10-01

2000-10-24

Elms, Richard

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438653, 438655, 438660, 438683, H01L 2144

Patent

active

061366994

ABSTRACT:
In manufacturing a semiconductor device, a refractory metal silicide layer having a first phase structure is formed. In this case, the refractory metal silicide layer having the first phase structure may be formed during performing a deposition operation of a refractory metal, in a state in which a semiconductor substrate is heated. Instead, a refractory metal film may be first deposited in a vacuum state, and then a semiconductor substrate may be heated in the vacuum state to change the refractory metal film into said refractory metal silicide layer having a first phase structure. After the refractory metal silicide layer having the first phase structure is formed, heat treatment is performed to change said refractory metal silicide layer having said first phase structure into a refractory metal silicide layer having a second phase structure.

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patent: 5621232 (1997-04-01), Ohno
Wei, Chih-Shih et al., Formation of Self-Aligned Tin/CoSi.sub.2 Bilayer from Co/Ti/Si and Its Applications in Salicide, Diffusion Barrier and Contact Fill, 1990 IEEE, VMIC Conference, pp. 233-239.
Ogawa, Shinichi et al., "Epitaxial CoSi.sub.2 Film Formation on (100) Si by Annealing of Co/Ti/Si Structure in N.sub.2 ", 1993 Spring MRS Meeting, San Francisco, pp. 4-10.
J.W. Mayer and S.S. Lau, Electronic Materials Science: For Integrated Circuits in Si and GaAs, (Macmillan, New York, 1990), chp. 11.
S. Wolf and R.N. Tauber, Silicon Processing for the VLSI Era,vol. 1--Process Technology, (Lattice Press, Sunset Beach, CA, 1986).

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