High stress oxide to eliminate BPSG/SiN cracking

Details High stress oxide to eliminate BPSG/SiN cracking High stress oxide to eliminate BPSG/SiN cracking

1999-10-20

2000-10-24

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

H01L 214763

Patent

active

061366889

ABSTRACT:
The present invention is a method of capping with a high compressive stress oxide, a boron phospho-silicate glass (BPSG) interlayer dielectric (ILD) gapfill that has been deposited on a topographic silicon substrate, in order to eliminate the formation of cracks in subsequently deposited silicon nitride (SiN) layers, other subsequently deposited high tensile stress layers and cracks that result from other post-BPSG deposition high temperature processes.

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