Mosfet with gate plug using differential oxide growth

Details Mosfet with gate plug using differential oxide growth Mosfet with gate plug using differential oxide growth

1999-02-08

2000-10-24

Nelms, David

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438585, H01L 213205

Patent

active

061366749

ABSTRACT:
A semiconductor device is formed having a gate electrode and a gate oxide comprising a central portion and edge portions having a thickness greater than that of the edge portions. Nitrogen is ion implanted into the surface of the semiconductor substrate to retard the growth of the central portion of the gate oxide, thereby enabling formation of gate oxide having a thin central portion and thicker edge portions.

REFERENCES:
patent: 4920401 (1990-04-01), Sakai et al.
patent: 5221632 (1993-06-01), Kurimoto et al.
patent: 5610430 (1997-03-01), Yamashita et al.
IEDM Technical Digest, K. Kurimoto et al., "A T-Gate Overlapped LDD Device With High Circuit Performance And High Reliability", Dec. 1991, pp. 541-544.

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