Method for forming gate oxide layers

Details Method for forming gate oxide layers Method for forming gate oxide layers

1998-12-16

2000-10-24

Bowers, Charles

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

438 96, 438 97, 438283, 438486, 438770, 438758, 437 56, H01L 218238, H01L 218234

Patent

active

061366714

ABSTRACT:
A method of forming gate oxide layers. A first and a second poly-silicon gates are formed over a substrate. An amorphous silicon layer is formed on the first poly-silicon gate, followed by oxidizing the amorphous silicon layer and the second poly-silicon gate. A poly-silicon layer is formed on the gate oxide layers, devices with different capacitance are formed.

REFERENCES:
patent: 5989962 (1999-11-01), Holloway et al.
patent: 6051460 (2000-04-01), Nayak et al.

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