Method and apparatus for depositing zinc oxide film and method f

Details Method and apparatus for depositing zinc oxide film and method f Method and apparatus for depositing zinc oxide film and method f

1999-02-17

2000-10-24

Diamond, Alan

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

2041921, 20419212, 20429813, 20429816, 20429819, 20429817, 136256, 136252, 136265, 257431, 257433, 257434, 427571, 428702, 438 57, 438 69, 438 85, C23C 1435, H01L 3104, H01L 3118

Patent

active

061361623

ABSTRACT:
A deposition method is adapted to deposit a zinc oxide film that has a high light transmittance, an adequate specific electric resistance and a large thickness at a high deposition rate and at low cost in a process that may last long but is stable. The method for depositing a zinc oxide film on a substrate held in an inert gas atmosphere is conducted by magnetron sputtering so that the maximum magnetic flux density in a direction parallel to the surface of the zinc oxide target is held to be not higher than 350 gauss.

REFERENCES:
patent: 4309266 (1982-01-01), Nakamura et al.
patent: 4419533 (1983-12-01), Czubatyj et al.
patent: 4428810 (1984-01-01), Webb et al.
patent: 4532372 (1985-07-01), Nath et al.
patent: 5180476 (1993-01-01), Ishibashi et al.
patent: 5453135 (1995-09-01), Nakagawa et al.
patent: 5736267 (1998-04-01), Mitsui et al.

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