Method and apparatus for depositing zinc oxide film and method f

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

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2041921, 20419212, 20429813, 20429816, 20429819, 20429817, 136256, 136252, 136265, 257431, 257433, 257434, 427571, 428702, 438 57, 438 69, 438 85, C23C 1435, H01L 3104, H01L 3118

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active

061361623

ABSTRACT:
A deposition method is adapted to deposit a zinc oxide film that has a high light transmittance, an adequate specific electric resistance and a large thickness at a high deposition rate and at low cost in a process that may last long but is stable. The method for depositing a zinc oxide film on a substrate held in an inert gas atmosphere is conducted by magnetron sputtering so that the maximum magnetic flux density in a direction parallel to the surface of the zinc oxide target is held to be not higher than 350 gauss.

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patent: 5453135 (1995-09-01), Nakagawa et al.
patent: 5736267 (1998-04-01), Mitsui et al.

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