Method of fabricating a wiring in a semiconductor device

Details Method of fabricating a wiring in a semiconductor device Method of fabricating a wiring in a semiconductor device

1996-08-30

1998-05-26

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438634, 438639, H01L 214763

Patent

active

057563977

ABSTRACT:
A method of fabricating a wiring in a semiconductor device, including the steps of (1) forming an insulation film on a semiconductor substrate, (2) forming a groove lane having an inclined plane at an upper part thereof by etching the insulation film in a wiring region thereof, (3) forming a wiring film on the whole surface, and (4) etching the wiring film in the wiring region to form the wiring. The groove lane can be formed by etching the insulation film to form the lane and sputter etching the upper part of the lane using inert ions. The method can also include, before the forming the film step, forming an inter-insulation layer and an etch stopper.

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Article entitled "New Method of Making A1 Single Crystal Interconnections On Amorphous Insulators" By J. Wada, K. Suguro, No. Hayasaka and H. Okano Presented at the 31ST Annual Proceedings of Reliability Physics 1993 at Atlanta, Georgia On Mar. 23-25, 1993.

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