Dry etching method

Details Dry etching method Dry etching method

1994-05-03

1996-03-19

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566471, 1566511, 1566621, H01L 2100

Patent

active

055000797

ABSTRACT:
A semiconductor material to be etched is held in a reaction chamber at a predetermined temperature. A reactive etching gas such as a chlorine gas is introduced into the reaction chamber for a first period of time. Thereafter, the reaction chamber is evacuated for a second period of time, and ultraviolet radiation is applied to the semiconductor material for a third period of time within the second period of time for thereby etching the semiconductor material to a depth on the order of a molecular or atomic layer.

REFERENCES:
patent: 4643799 (1987-02-01), Tsujii et al.
patent: 4693779 (1987-09-01), Okuhira et al.
Patent Abstracts of Japan, vol. 11, No. 17 (E-471), 17 Jan. 1987 & JP-A-61 189 644 (Hitachi Ltd.) 23 Aug. 1986.
Takashi Meguro et al., "Layer-by-layer controlled digital etching by means of an electron-beam-excited plasma system", Japanese Journal of Applied Physics, vol. 29, No. 10, Oct. 1990, Tokyo, Japan, pp. 2216-2219.
Y. Horiike et al., "Excimer-laser etching on Silicon", Applied Physics A. Solids and Surfaces, vol. A44, No. 4, Dec. 1987, Heidelberg DE, pp. 313-332.
Patent Abstracts of Japan, vol. 11, No. 15, No. 308 (E-1097) 7 Aug. 1991 & JP-A-31 10 844 (Rikagaku Kenkyusho) 10 May 1991.
T. Meguro et al., "Digital etching of GaAs: New approach of dry etching to atomic ordered processing", Applied Physics Letters, vol. 56, No. 16, 16 Apr. 1990, New York, US, pp. 1552-1554.
J. Gary Eden, "Photochemical processing of semiconductors: New applications for visible and ultraviolet lasers", IEEE Circuits and Devices Magazine, vol. 2, No. 1, Jan. 1986, New York US, pp. 18-24.
P. D. Brewer et al., "Laser-assisted dry etching", Solid State Technology, vol. 28, No. 4, Apr. 1985, Washington, US, pp. 273-278.
P. D. Brewer et al., "Dry, laser-assisted rapid HBr etching of GaAs", Applied Physics Letters, vol., 47, No. 3, Aug. 1985, New York, US, pp. 310-312.

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