Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-05-10
1996-09-03
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257292, 257443, 257448, 257462, H01L 3106
Patent
active
055526195
ABSTRACT:
A capacitor coupled contactless imager structure and a method of manufacturing the structure results is a phototransistor that structure includes an N-type collector region formed in P-type semiconductor material. A P-type base region is formed in the collector region. An n-doped polysilicon emitter contact is formed in contact with the surface to the P-type base region such that an n+ epitaxial region is formed in the base region as the emitter of the phototransistor. Silicon dioxide separates the poly1 emitter contact and exposed surfaces at the base region from a layer of poly2 about 3000-4000 .ANG. thick that partially covers the base region; the gates of the CMOS peripheral devices are also poly2. The poly2 over the base region serves as a base coupling capacitor and a row conductor for the imager structure. The thickness of the poly2 capacitor plate allows it to be doped utilizing conventional techniques and silicided to improve the RC constant.
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Fossum, Eric R., "Active-Pixel Sensors Challenge CCDs", Laser Focus World, Jun. 1993, pp. 83-87.
Bergemont Albert
Chi Min-hwa
Haggag Hosam
Mead Carver A.
Mintel William
National Semiconductor Corporation
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