Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-01-02
1999-02-09
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257347, 257383, 257751, H01L 2701, H01L 2976, H01L 2348
Patent
active
058698744
ABSTRACT:
A field effect transistor includes, a silicon substrate having impurity doping of a first conductivity type; source and drain diffusion regions of a second conductivity type within the silicon substrate, the source region and the drain region being spaced from one another to define a channel region therebetween within the silicon substrate; a gate relative to the silicon substrate operatively adjacent the channel region; and respective ohmic electrical contacts to the source region and the drain region, the electrical contact to the source region comprising a substrate leaking junction, the electrical connection to the drain region not comprising a substrate leaking junction.
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Fahmy Wael
Micro)n Technology, Inc.
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