Semiconductor device capable of avoiding damage by ESD

Details Semiconductor device capable of avoiding damage by ESD Semiconductor device capable of avoiding damage by ESD

1997-07-18

1999-02-09

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257356, H01L 2362

Patent

active

058698710

ABSTRACT:
In a semiconductor device including a semiconductor substrate, first and second external terminals, a first impurity diffusion region connected to the first external terminal, and second and third impurity diffusion regions forming a MIS transistor, one of the second and third impurity diffusion regions facing the first impurity region is connected to the second external terminal. The distance between the first diffusion region and the MIS transistor is substantially smaller than a certain value compared to conventional device.

REFERENCES:
patent: 4617482 (1986-10-01), Matsuda
C. Duvvury et al., "Internal Chip ESD Phenomena Beyond the Protection Circuit", IEEE Transactions on Electron Devices, vol. 35, No. 12, Dec. 1988, pp. 2133-2139.

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