Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Patent
1998-05-11
2000-10-03
Nelms, David
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
438909, H01L 2131, H01L 21469
Patent
active
061272868
ABSTRACT:
Gaseous reactants capable of depositing a thin film on a semiconductor substrate are introduced into a deposition zone of a deposition apparatus through a gaseous reactants dispersion apparatus having rounded corners and smoothed anodized surfaces and maintained at a temperature ranging from about 70.degree. C. to about 85.degree. C., and preferably from about 75.degree. C. to about 80.degree. C., to inhibit the deposition and accumulation on such surfaces of charged materials capable of generating particles which may cause damage to the semiconductor substrate.
REFERENCES:
patent: 5462899 (1995-10-01), Ikeda
Catabay Wilbur C.
Lee Ming-Yi
Zhang Kaijun Leo
LSI Logic Corporation
Nelms David
Smith Bradley
Taylor John P.
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