Method of forming a tee shaped tungsten plug structure to avoid

Details Method of forming a tee shaped tungsten plug structure to avoid Method of forming a tee shaped tungsten plug structure to avoid

1999-07-16

2000-10-03

Tsai, Jey

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438253, 438672, H01L 214763, H01L 218242

Patent

active

061272604

ABSTRACT:
A process for forming a narrow diameter opening, in thick insulator layers, has been developed. The process allows the aspect ratio for a narrow diameter opening, to be reduced, by utilizing a two stage opening procedure. A first stage is used to create a first narrow diameter opening, in composite insulator layers, via an anisotropic RIE procedure. An isotropic wet etch procedure is then employed to widen the first narrow diameter opening, only in an overlying, doped silicon oxide component of the composite insulator layers, while the openings in the underlying, undoped silicon oxide components, of the composite insulator layers, do not increase in diameter. This tee shaped opening is used to accommodate a tee shaped metal structure, featuring a wide metal shape, located in the widened opening in the doped silicon oxide component, of the composite insulator layers. A second narrow diameter opening is then formed in an overlying, planarized insulator layer, exposing a portion of the top surface of the wide metal shape, of the tee shaped metal structure. Formation of an upper metal plug, in the second narrow diameter opening, concludes the process for forming a metal structure, in a narrow diameter opening, where the aspect ratio of the narrow diameter opening was reduced via a two stage opening procedure.

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patent: 5869403 (1999-02-01), Becker et al.
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patent: 5918120 (1999-06-01), Hung
patent: 6051462 (1999-06-01), Ohno

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