Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1995-05-10
1999-02-09
Dang, Thi
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
216 71, 118723E, 156345, 427569, H05H 100
Patent
active
058694021
ABSTRACT:
A reactive gas is introduced into a vacuum chamber by a gas controller so that a plasma is generated in a plasma generation region. Subsequently, high-frequency power from a high-frequency power source is applied to a sample stage in the vacuum chamber so that ions in the plasma are made incident upon the sample stage, thereby performing dry etching with respect to a sample on the sample stage. In main etching, a value of (pressure of reactive gas)/(frequency of high-frequency power) is reduced so as to reduce a scattering probability, which is the probability of ions being scattered in collision with neutral particles in a sheath region, thereby increasing the energy of ion fluxes and making the incidence directions of the ion fluxes perpendicular to a surface of the sample stage. In overetching, the value of (pressure of reactive gas)/(frequency of high-frequency power) is increased so as to increase the above scattering probability, thereby reducing the energy of the ion fluxes and tilting the incidence directions of the ion fluxes from a perpendicular to the surface of the sample stage.
REFERENCES:
patent: 5415718 (1995-05-01), Ohmi et al.
N. Mutsukura et al., "Plasma sheath thickness in radio-frequency discharges", 1990 American Institute of Physics, J. Appl. Phys. 68(6), Sep. 15, 1990, 2657-2660.
K. Harafuji et al., "RF Glow Discharge and Ion Transport: Effects of Applied Frequency, Gas Pressure and Method of Power Coupling," Jpn. J. Appl. Phys. vol. 33 (1994), pp. 2212-2222 Part 1, No. 4B, 1994.
Harafuji Kenji
Kubota Masafumi
Dang Thi
Matsushita Electric - Industrial Co., Ltd.
LandOfFree
Plasma generating and processing method and apparatus thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Plasma generating and processing method and apparatus thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma generating and processing method and apparatus thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1948254