Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-01-13
1999-02-09
Quach, T. N.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438656, 438659, 438683, H01L 21265, H01L 21283
Patent
active
058693971
ABSTRACT:
On a silicon substrate (1) is formed a MOS transistor which comprises a gate oxide film (3), a polysilicon gate electrode (4), an LDD diffusion layer (5) and a source/drain diffusion layer (7). A Ti film (8) is formed over the entire surface of the MOS transistor, the surface areas of the source/drain diffusion layer (7) and the polysilicon gate electrode (4) are silicified to form Ti silicide film (9, 10). Thereafter, W or Ta is ion-implanted as an alloy forming material into Ti silicide (10), and an anneal treatment is performed to react doped W or Ta with Ti silicide (10) and form TiW.sub.x Si.sub.y or TiTa.sub.x Si.sub.y (11).
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patent: 5739064 (1998-04-01), Hu et al.
Choi, J., et al., "Thermally stable ternary titanium-tantalum silicide formation on polycrystalline silicon", J. Appl. Phys., vol. 74, No. 2, 15 Jul. 1993, pp. 1456-1458.
Fujii, K., et al., "A Thermally Stable Ti-W Salicide for Deep-Submicron Logic with Embedded DRAM", IEEE IEDM Tech. Digest, Dec. 1996, pp. 451-454.
S.L. Hsia et al., "Resistance and Structural Stabilities of Epitaxial CoSi.sub.2 Films on (001) Si Substrates", J. Appl. Phys., vol. 72, No. 5, Sep. 1992, pp. 1864-1873.
NEC Corporation
Quach T. N.
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