Teos-ozone planarization process

Details Teos-ozone planarization process Teos-ozone planarization process

1996-10-29

1999-02-09

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438631, H01L 214763

Patent

active

058693947

ABSTRACT:
A method for forming a planarization layer on a semiconductor device including the steps of first providing a substrate, then depositing a layer of a silicon-rich oxide material, then forming metal interconnects on the silicon-rich oxide layer, and depositing a TEOS-ozone oxide layer over the metal interconnects and the silicon-rich oxide layer such that a substantially planar surface is obtained.

REFERENCES:
patent: 5051380 (1991-09-01), Maeda et al.
patent: 5332694 (1994-07-01), Suzuki
patent: 5393708 (1995-02-01), Hsia et al.
patent: 5518962 (1996-05-01), Murao
patent: 5618381 (1997-04-01), Doan et al.

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