Fabrication method for semiconductor device

Details Fabrication method for semiconductor device Fabrication method for semiconductor device

1998-07-13

2000-10-03

Bowers, Charles

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438302, 438274, 438981, H01L 21425

Patent

active

061272485

ABSTRACT:
A fabrication method for a semiconductor device capable of adjusting a thickness of each portion of gate insulating film at both sides of a gate, which includes the steps of: providing a semiconductor substrate having a first region and a second region; forming a gate insulating film on the substrate; forming a conductive layer on the gate insulating film and patterning the conductive layer, for thereby forming a first gate and a second gate on the first and second regions, respectively; forming impurity areas in the first region at both sides of the first gate in order to reduce the velocity of oxidation; applying a re-oxidation process to the gate insulating film, for thereby forming each portion of the gate insulating film at both sides of the first gate thinner than each portion of the gate insulating film at both sides of the second gate; and respectively forming a source/drain region at both sides of the first and second gates.

REFERENCES:
patent: 5132757 (1992-07-01), Tignor et al.
patent: 5330920 (1994-07-01), Soleimani et al.
patent: 5429972 (1995-07-01), Anjum et al.
patent: 5516707 (1996-05-01), Loh et al.
patent: 5610430 (1997-03-01), Yamashita et al.
patent: 5648282 (1997-07-01), Yoneda
patent: 5684317 (1997-11-01), Hwang
patent: 5750435 (1998-05-01), Pan
patent: 5840600 (1998-11-01), Yamazaki et al.
patent: 5910672 (1999-06-01), Iwamatsu et al.
patent: 5918133 (1999-06-01), Gardner et al.
C.T. Liu et al., "Light Nitrogen Implant for Preparing Thin-Gate Oxides", IEEE Electron Device Letter, vol. 18, No. 3, pp. 105-107, Mar. 1997.

Affiliated with

Also associated with

Rating

Fabrication method for semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication method for semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication method for semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-194804