Sense circuit for reading data stored in nonvolatile memory cell

Details Sense circuit for reading data stored in nonvolatile memory cell Sense circuit for reading data stored in nonvolatile memory cell

1991-02-19

1993-06-08

Callahan, Timothy P.

Static information storage and retrieval

Read/write circuit

365208, 365210, 307530, G11L 1300

Patent

active

052185702

ABSTRACT:
A sense circuit for reading EPROM and ROM type memory cells employs a circuit for generating an offsetting current which is exempt of error during transients and which thus permits to achieve a reduced access time. On the other hand, the sense circuit maintains the intrinsic advantages of a current-offset sensing architecture which is represented by a substantially unlimited operating voltage range toward the maximum value VCC.sub.max. The current generating circuit is driven by means of a supplementary row of cells which is decoded at every reading and which replicates, during transients, the behaviour of the row selected for the reading.

REFERENCES:
patent: 4649301 (1987-03-01), Van Tran
patent: 4661926 (1987-04-01), Lee
patent: 4713797 (1987-12-01), Morton et al.
patent: 4727519 (1988-02-01), Morton et al.
patent: 4949307 (1990-08-01), Campardo

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