Process of etching with plasma etch gas

Details Process of etching with plasma etch gas Process of etching with plasma etch gas

1978-07-27

1980-01-08

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156656, 156665, 156667, 204192E, 252 791, C23F 100

Patent

active

041826469

ABSTRACT:
A method of etching aluminum in a planar plasma etcher is disclosed wherein a first plasma of carbon tetrachloride is developed followed by a second plasma of carbon tetrachloride and chlorine. By generating the specific claimed plasmas at specific partial pressures in two steps, the selectivity of the etching operation is greatly enhanced while disadvantages encountered in etching aluminum with prior art techniques are greatly reduced.

REFERENCES:
patent: 3994793 (1976-11-01), Harvilchuck et al.
patent: 4030967 (1977-06-01), Ingrey et al.

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