Nonvolatile semiconductor memory device having row decoder suppl

Details Nonvolatile semiconductor memory device having row decoder suppl Nonvolatile semiconductor memory device having row decoder suppl

1992-07-24

1995-02-21

LaRoche, Eugene R.

Static information storage and retrieval

Addressing

Particular decoder or driver circuit

365185, 365218, 365900, 36518909, 36518911, 257326, 326106, 327534, G11C 800

Patent

active

053922530

ABSTRACT:
A nonvolatile semiconductor memory device is provided in which a negative voltage is applied to a gate electrode of a memory cell transistor during an erase mode. The memory device includes a row decoder circuit having an N-channel transistor connected to a word line. The N-channel transistor is provided on a P-type well region of a semiconductor substrate. A negative voltage is applied to the P-type well region during the erase mode, while ground potential is applied thereto during another modes.

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