Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-03-21
1997-09-23
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257314, 257315, H01L 29788
Patent
active
056708092
ABSTRACT:
A flash memory has diffused layers extending in a column direction to form channel regions between each two of the diffused layers, field oxide films extending in a row direction to divide the channel regions into separate channels arranged in a matrix, a floating gate disposed for each channel as a split gate, and a strip control gates extending in the row direction and overlying each row of the split floating gate. Each of the floating gates has a lower layer having a lower impurity concentration and an upper layer having a higher impurity concentration. The lower impurity concentration of the lower layer prevents fluctuations in device characteristics while the higher concentration of the upper layer enhances etch rates in two etching process for forming the floating gates of a matrix.
REFERENCES:
patent: 5070032 (1991-12-01), Yuan et al.
patent: 5237196 (1993-08-01), Mikata et al.
patent: 5365098 (1994-11-01), Miyamoto et al.
patent: 5418741 (1995-05-01), Gill
patent: 5446298 (1995-08-01), Kojima
NEC Corporation
Ngo Ngan V.
LandOfFree
Non-volatile semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Non-volatile semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile semiconductor memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1939569