Method of forming an ultra thin dielectric film for a capacitor

Details Method of forming an ultra thin dielectric film for a capacitor Method of forming an ultra thin dielectric film for a capacitor

1996-06-13

1997-09-23

Dang, Trung

Fishing, trapping, and vermin destroying

437 52, 437 47, 437 60, 437919, H01L 2102

Patent

active

056704313

ABSTRACT:
The present invention provides a method of forming a ultra thin silicon nitride/silicon oxide (NO) dielectric layer over a polysilicon capacitor electrode formed adjacent to a silicon oxide insulating layer. First, a HF in-situ vapor clean is used to clean the polysilicon electrode and oxide insulating layers. A first silicon nitride (SiN) layer is then selectively deposited over the electrode. Next, the substrate is exposed to air. This grows a native oxide layer over the first silicon nitride layer and the insulating layer. Next, a second SiN layer is formed over the first silicon nitride layer, the insulating layer and the interface between the polysilicon electrode and the insulating layer. A thin oxide dielectric layer is grown over the second silicon nitride layer to complete the (NO) capacitor dielectric layer. The method of the present invention is an inexpensive process that provides an oxide free interface between the polysilicon and oxide layers. The method produces an uniform ultra thin silicon nitride/silicon oxide dielectric layer over a polysilicon electrode.

REFERENCES:
patent: 5104819 (1992-04-01), Freiberger et al.
patent: 5378645 (1995-01-01), Inoue et al.
patent: 5380399 (1995-01-01), Miyashita et al.
patent: 5423944 (1995-06-01), Wong
patent: 5492854 (1996-02-01), Ando

Affiliated with

Also associated with

Rating

Method of forming an ultra thin dielectric film for a capacitor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming an ultra thin dielectric film for a capacitor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming an ultra thin dielectric film for a capacitor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1938537