Method of forming a metal pattern in manufacturing a semiconduct

Details Method of forming a metal pattern in manufacturing a semiconduct Method of forming a metal pattern in manufacturing a semiconduct

1996-01-11

1997-09-23

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430313, 15665911, 216 41, G03F 720

Patent

active

056702981

ABSTRACT:
A method a metal pattern on a substrate. The method comprises the steps of forming a metal film on the substrate, forming a porous film on the metal film, forming a photoresist pattern on the porous film, and etching the metal film and the porous film using the photoresist pattern as a mask to thereby form the metal pattern. During the step of forming the photoresist pattern on the porous film, the porous film causes the scattering of light incident on the porous film to thereby cause a mutual interference of the light.

REFERENCES:
patent: 4820611 (1989-04-01), Arnold
patent: 5068207 (1991-11-01), Manocha
patent: 5126289 (1992-06-01), Ziger
patent: 5286608 (1994-02-01), Koh

Affiliated with

Also associated with

Rating

Method of forming a metal pattern in manufacturing a semiconduct does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a metal pattern in manufacturing a semiconduct, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a metal pattern in manufacturing a semiconduct will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1938201