Method of dry etching

Details Method of dry etching Method of dry etching

1985-12-16

1987-02-17

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156657, 156662, 156345, 219121LJ, 219121LM, 427 531, 427 94, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

046437991

ABSTRACT:
A dry etching method according to the present invention is composed of the steps of evacuating the reaction chamber in which a substrate to be etched is set, introducing etching gas into the reaction chamber, causing the substrate to adsorb the introduced etching gas and thereafter evacuate the etching gas remaining in the reaction chamber, and irradiating the surface of the substrate to be etched with photon energy through a light window provided in the reaction chamber.

REFERENCES:
patent: 2841477 (1958-07-01), Hall
patent: 3095341 (1963-06-01), Ligenza
patent: 4414059 (1983-11-01), Blum et al.
patent: 4490211 (1984-12-01), Chen et al.

Affiliated with

Also associated with

Rating

Method of dry etching does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of dry etching, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of dry etching will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1938019