Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1994-12-07

1997-09-23

Chu, John S.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437 69, 437235, 437243, H01L 21306

Patent

active

056700172

ABSTRACT:
A method of manufacturing a semiconductor device of the present invention includes steps of introducing mixed gas containing CHF.sub.3 and CF.sub.4 in which a gas flow ratio of CF.sub.4 among CHF.sub.3 and CF.sub.4 is 30% or lower into an etching atmosphere, setting the pressure in the etching atmosphere to 1.2 Torr or lower and applying radio frequency electric power of 4 W/cm.sup.2 or more to a pair of electrodes, thereby to apply patterning with etching to an insulating film using a resist pattern as a mask.

REFERENCES:
patent: 5302240 (1994-04-01), Hori et al.
"High NA I-Line Lithography", Nozue, Semi Technology Symposium, Dec. 2, 1992, pp. 25-30.
"X-Ray Nanolithography-the Clearest Path to 0.1 and Sub-0.1.mu.m ULSI", Schattenburg et al, Proceedings of 1991 Intern. MicroProcess Conference, pp. 63-70.

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