Nonvolatile semiconductor memory capable of simultaneously equal

Details Nonvolatile semiconductor memory capable of simultaneously equal Nonvolatile semiconductor memory capable of simultaneously equal

1994-11-10

1996-09-24

Nelms, David C.

Static information storage and retrieval

Floating gate

Particular biasing

36518521, 36518520, 3652335, 36518907, 36518909, 36518911, G11C 1606

Patent

active

055597378

ABSTRACT:
In a nonvolatile semiconductor memory having a two-stage sense read circuit using a level shift circuit and a single-end sense amplifier, relationships of sizes of a main memory cell bit line charge transistor, a main memory cell bit line transfer gate transistor, a main memory cell bit line load transistor, a dummy cell bit line charge transistor, a dummy cell bit line transfer gate transistor, and a dummy cell bit line load transistor are set to simultaneously satisfy conditions for equalizing a bit line and a dummy cell bit line and conditions for equalizing a sense line and a dummy cell sense line. Therefore, the potentials of the bit line and the dummy cell bit line and the potentials of the sense line and the dummy cell sense line can be simultaneously equalized, and a high-speed read operation can be achieved.

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