Semiconductor delay circuit device

Details Semiconductor delay circuit device Semiconductor delay circuit device

1993-06-22

1995-02-21

Loke, Steven Ho Yin

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257390, 257401, 257734, 257773, H01L 2976, H01L 2994, H01L 31062, H01L 2348

Patent

active

053919041

ABSTRACT:
A semiconductor delay circuit device comprises a pair of transistors of the same conduction type having source regions that are arranged adjacent to each other and facing each other, and a substrate contact diffusion region whose conduction type is opposite to that of the source regions. The substrate contact diffusion region extends between the source regions. Therefore, the source regions of the transistors do not influence each other.

REFERENCES:
patent: 4695866 (1987-09-01), Koyabu
patent: 4737831 (1988-04-01), Iwai
patent: 4742254 (1988-03-01), Tamisawa
patent: 4893164 (1990-01-01), Shirato
patent: 4942448 (1990-07-01), Tsukamoto et al.
patent: 5023688 (1991-06-01), Ando et al.
IBM Technical Disclosure Bulletin, vol. 28, No. 11 Apr. 1986, "Source/Drain Personalization of High Density CMOS Read-Only Store", p. 4872.

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