Selective recrystallization to reduce P-channel transistor leaka

Details Selective recrystallization to reduce P-channel transistor leaka Selective recrystallization to reduce P-channel transistor leaka

1993-12-21

1995-02-21

Loke, Steven Ho Yin

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 57, 257 66, 257349, 257352, 257921, HO1L 2701, HO1L 2712, HO1L 2904, HO1L 2936

Patent

active

053919033

ABSTRACT:
A silicon layer formed atop a sapphire substrate is selectively recrystallized such that the original degraded quality of the crystallinity of an N-well region where a P-channel device is to be formed is enhanced, so that leakage in the P-channel device is reduced, while the high ultraviolet reflectance number of a P-well region where an N-channel device resides remains unaffected. The process according to the present invention involves implanting silicon into only that portion of the silicon layer where an N-conductivity well region for a P-channel device is to be formed. An N-conductivity type impurity is introduced into the silicon-implanted portion of the silicon layer, to form the N-conductivity well region. The structure is then annealed at a relatively low temperature for several minutes, which is sufficient to activate the phosphorus and to cause local recrystallization of the N-well region of the silicon layer, without essentially causing a redistribution of the phosphorus. What results is a precisely tailored, low leakage P-channel device with a very close to ideal characteristic, integrated in the same SOS structure with a high UVR-based N-channel device.

REFERENCES:
patent: 4199773 (1980-02-01), Goodman et al.
patent: 4463492 (1984-08-01), Maeguchi

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