Semiconductor device and production method thereof

Details Semiconductor device and production method thereof Semiconductor device and production method thereof

1992-08-24

1995-02-21

Sikes, William L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257314, H01L 29788

Patent

active

053919025

ABSTRACT:
A semiconductor device includes a base layer, a chip region formed on the base layer, a peripheral region which surrounds the chip region on the base layer, and a patterned stacked structure formed on the base layer in both the chip region and the peripheral region, where the patterned stacked structure includes a lower layer which is formed on the base layer, an intermediate layer which is formed on the lower layer and an upper layer formed on the intermediate layer. The upper layer and the intermediate layer are aligned to one side surface of the lower layer in at least a part of the chip region, and the intermediate layer and the upper layer cover one side surface of the lower layer in at least a part of the peripheral region.

REFERENCES:
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patent: 4319263 (1982-03-01), Rao
patent: 4517729 (1985-05-01), Batra
patent: 4758529 (1988-07-01), Ipri
patent: 4816885 (1989-03-01), Yoshida et al.
patent: 4821092 (1989-04-01), Noguchi
patent: 4861730 (1989-08-01), Hsia et al.
patent: 4886977 (1989-12-01), Gofuku et al.
patent: 4935792 (1990-06-01), Tanaka et al.

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