Method of producing sheets of crystalline material and devices m

Details Method of producing sheets of crystalline material and devices m Method of producing sheets of crystalline material and devices m

1992-03-02

1993-06-08

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

15662072, 156603, 15662673, 156DIG64, 156DIG74, 156DIG88, 437235, 437962, 437968, C30B 1334

Patent

active

052175642

ABSTRACT:
A method of producing sheets of crystalline material is disclosed, as well as devices employing such sheets. In the method, a growth mask is formed upon a substrate and crystalline material is grown at areas of the substrate exposed through the mask and laterally over the surface of the mask to form a sheet of crystalline mate

REFERENCES:
patent: 2992903 (1961-07-01), Imber
patent: 3031275 (1962-04-01), Shockley
patent: 3112997 (1963-12-01), Bezring et al.
patent: 3133336 (1964-05-01), Marinace
patent: 3172778 (1965-03-01), Gunther et al.
patent: 3186880 (1965-06-01), Skaggs et al.
patent: 3247576 (1966-04-01), Dill et al.
patent: 3336159 (1967-08-01), Liebson
patent: 3341376 (1967-09-01), Sperke et al.
patent: 3370980 (1968-02-01), Anderson
patent: 3372069 (1968-03-01), Bailey et al.
patent: 3425879 (1969-02-01), Shaw et al.
patent: 3634150 (1972-01-01), Horn
patent: 3816906 (1974-06-01), Falckenberg
patent: 3884733 (1975-05-01), Bean
patent: 3900943 (1975-08-01), Sirtl et al.
patent: 3935040 (1976-01-01), Mason
patent: 4027053 (1977-05-01), Lesk
patent: 4046618 (1977-09-01), Chaudhari et al.
patent: 4053350 (1977-10-01), Olsen et al.
patent: 4116751 (1978-09-01), Zaromb
patent: 4168998 (1979-09-01), Hasegawa et al.
patent: 4177372 (1979-12-01), Kutera et al.
patent: 4199397 (1980-04-01), Gustler
patent: 4292091 (1981-09-01), Togei
patent: 4381201 (1983-04-01), Sakurai
patent: 4461670 (1984-07-01), Celler et al.
Gibbons et al., "CW Laser Recrystallization of 4007Si on Amorphous Substrates" Applied Physics Letters 34(12) Jun. 15, 1979, pp. 831-832.
Fan et al, "Crystallization of Amorphous Silicon Films by Nd:Yag Laser Heating", Applied Physics Letters, 27 (1975) pp. 224-226.
Gers et al, "Crystallographic Orientation of Silicon on an Amorphous Substrate . . . " Applied Physics Letters, vol. 35 (1979) pp. 71-74.
IEEE Photovoltaic Specialist Conf.: "Peeled Film Technology for Solar Cells", A. G. Milnes, D. L. Feucht, 1975, pp. 338-341.
Journal of the Electrochemical Society: "Selective Epitaxial Deposition of Gallium Arsenide in Holes", Don W. Shaw, Sep. 1966, pp. 904-908.
Solar Energy: Review Paper: "Solar Cells for Terrestrial Applications", Harold J. Hovel, vol. 19, 1977, pp. 605-615.
Abstract No. 224: "Thin Film GaAlAs-GaAs Solar Cells by Peeled Film Technology", by Makoto Konagai & Kiyoshi Takahasi, pp. 554-555.
"A Novel Crystal Growth Phenomenon: Single Crystal GaAs Overgrown onto Silicon Dioxide", F. W. Tausch, Jr. & A. G. Lapierre, III vol. 112, No. 7, pp. 706-709.
Tausch et al.; "Novel Crystal Growth-GaAs-Onto Silicon Dioxide", Journal of the Electrochemical Society; vol. 112, No. Jul. 1965; pp. 706-709.
Applied Physics Letters; "Lateral Epitaxy by Seeded Solidification for Growth of Single-Crystal Si Films on Insulators"; by Fan et al. vol. 38, No. 5, Mar. 1, 1981; pp. 365-367.
IEEE Photovoltaic Specialist Conf.: "A Nonconventional Approach to Thin Film Cell Fabrication", Kirkpatrick et al., Jun. 5-8, 1978 pp. 1342-1346.
IBM Technical Disclosure Bulletin; "Producing Semiconductor Devices by Oriented Lateral Overgrowth", by W. Von Muench, vol. 10, No. 10, Mar. 1968; pp. 1469-1470.

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