Semiconductor device with large substrate contact region

Details Semiconductor device with large substrate contact region Semiconductor device with large substrate contact region

1995-10-16

1996-09-24

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257369, 257370, 257372, H01L 2976, H01L 2994

Patent

active

055593569

ABSTRACT:
In a MOS-type semiconductor device having a semiconductor substrate, a drain region, a source region, and a gate electrode between the drain region and the source region, a substrate contact region of a conductivity type the same as that of the semiconductor substrate is formed adjacent to the source region, and is wider than the source region and the drain region.

REFERENCES:
patent: 5281842 (1994-01-01), Yasuda et al.

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