Semiconductor element having Cr in silicon dioxide

Details Semiconductor element having Cr in silicon dioxide Semiconductor element having Cr in silicon dioxide

1994-07-13

1996-09-24

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257325, 257402, 257405, 257406, 257410, 257411, H01L 29792

Patent

active

055593518

ABSTRACT:
A semiconductor element including a silicon substrate, a silicon oxide film formed on the silicon substrate, and a top electrode formed on the silicon oxide film, wherein chromium is included only in a region of the silicon oxide film, the region including the interface between the silicon oxide film and the top electrode and the vicinity of the interface, and the method of manufacturing the same.

REFERENCES:
patent: 3999209 (1976-12-01), Wrigley et al.
patent: 4837610 (1989-06-01), Hiratsuka et al.
Aronwitz, et al., "Modification of Interfacial Charge Between SiO.sub.2 and Silicon", Appl. Phys. Lett., 52(11), 14 Mar. 1988, pp. 913-915.
Krusin-Elbaum, et al., "Shifts in the Flatband Voltage of Metal-Oxide-Silicon Structure Due to Iodine in SiO.sub.2 ", Appl. Phys. Lett., 48(2), pp. 177-179.
Krusin-Elbaum et al., "Dependence of the Flatband Voltage of Si-MOS on Distribution of Cesium in SiO.sub.2 ", Electrochemical Soc., vol. 133, No. 8, Aug. 1986, pp. 1712-1715.
Takiyama, et al., "Electrical Characteristics of MOS Diode Contaminated with Cr-1", Japan Society of Applied Physics, 430a-SY-14, 1981, p. 707.
Takiyama et al., "Thermal Process Dependence of Chromium Donor/Acceptor in Silicon", Material Science Forum, vol. 117-118, 1993, pp. 261-266.
Nakanishi, et al., "Reliability of Metal-Implanted SiO.sub.2," Japan Society of Applied Physics, 28a-V-7, 1991, p. 592.

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