Low temperature method for synthesizing diamond with high qualit

Details Low temperature method for synthesizing diamond with high qualit Low temperature method for synthesizing diamond with high qualit

1992-04-01

1995-02-21

Beck, Shrive

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427249, 4272551, B05D 306, C23C 1626

Patent

active

053914090

ABSTRACT:
A diamond film deposited on a substrate heated at less than 400.degree. C. in vapor phase from material gas including hydrogen gas and hydrocarbon gas often incurs low strength, low abrasion resistance, and opacity owing to high concentration of non-diamond ingredients. The inventors have discovered that inclusion of nitrogen gas in material gas is likely to raise the concentration of non-diamond ingredients. Good diamond film of good quality shall be obtained by synthesizing from the material gas in which the nitrogen concentration is less than 1000 ppm. The smaller the nitrogen concentration is suppressed, the higher the quality of diamond rises.

REFERENCES:
patent: 4957061 (1990-09-01), Ando et al.
patent: 5009923 (1991-04-01), Ogata et al.
patent: 5071677 (1991-12-01), Patterson et al.
patent: 5094878 (1992-03-01), Yamamoto et al.
The Condensed Chemical Dictionary 10th edition; Van Nostrand Reinhold Company 1981 p. 856.
Schuegraf, K. K., Handbook of Thin-Film Deposition Processes and Techniques; Noyes Publications 1988 p. 81.
Patterson et al., "Halogen-Assisted Chemical Vapor Deposition of Diamond", disclosed at Second International Conference New Diamond Science and Technology held in Washington, D.C. from Sep. 8-Sep 17, 1990.

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