Post dry-etch cleaning method for restoring wafer properties

Details Post dry-etch cleaning method for restoring wafer properties Post dry-etch cleaning method for restoring wafer properties

1986-07-03

1990-01-30

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156662, 148DIG3, 148DIG60, C23F 100, H01L 21306

Patent

active

048971545

ABSTRACT:
A post dry etching process for restoring wafers damaged by dry etching such as RIE, comprising the steps of removing any dry etch residue layer from the etched portions of the wafer and forming an oxide on those etched portions; rapid thermal annealing the wafer to drive the oxygen from the oxide layer down into the wafer by a small amount, to getter impurities to this oxide layer, and to restore crystallinity below the oxide layer; and removing the oxide layer via an HF bath or a low powder dry etch process.

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