Method of fabricating single-crystal substrates of silicon carbi

Details Method of fabricating single-crystal substrates of silicon carbi Method of fabricating single-crystal substrates of silicon carbi

1986-06-10

1990-01-30

Doll, John

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156612, 156613, 156614, 156DIG64, 156DIG99, 428698, C30B 2520

Patent

active

048971499

ABSTRACT:
A single-crystal substrate of silicon carbide comprising a single-crystal substrate member of a material other than .alpha.-SiC, and a single-crystal layer of .alpha.-SiC formed over the substrate member with a ground layer provided between the substrate member and the single-crystal layer, the ground layer comprising a single-crystal layer of nitride of AlN, GaN or Al.sub.x Ga.sub.1-x N (0<x<1) having a hexagonal crystal structure or a crystal layer of the same structure made of a mixture of SiC and at least one of the nitrides; and a method for fabricating the same.

REFERENCES:
patent: 3634149 (1972-01-01), Knippenberg et al.
patent: 3960619 (1976-06-01), Seiter
patent: 4028149 (1977-06-01), Deines et al.
patent: 4147572 (1979-04-01), Vodakov et al.
patent: 4161743 (1979-07-01), Yanezawa et al.
patent: 4382837 (1983-05-01), Rutz
"Growth of Silicon Carbide from Solution", the Marshall article from the Material Research Bulletin, vol. 4, pp. S73-S84 (1969).
"Growth Phenomena in Silicon Carbide", the Knippenberg article, Chapter 8, entitled "The Growth of Silicon Carbide by Recrystallization and Sublimation", pp. 244-266, vol. 18, No. 3.
Chapter of the Knippenberg article entitled "Preparative Procedures" at pp. 171-179.

Affiliated with

Also associated with

Rating

Method of fabricating single-crystal substrates of silicon carbi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating single-crystal substrates of silicon carbi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating single-crystal substrates of silicon carbi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1922073