Memory cell with dual collector, active load transistors

Details Memory cell with dual collector, active load transistors Memory cell with dual collector, active load transistors

1986-12-18

1988-06-28

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Flip-flop

365154, 357 43, G11C 1300, G11C 1140

Patent

active

047544309

ABSTRACT:
A memory cell includes two active load, pnp transistors, and two npn switching transistors. The collector and base regions of the switching transistors are cross coupled. Each of the load transistors have two collectors, with the base of each load transistor directly connected to only one of its two collectors. The additional collector prevents the switching transistors from heavily saturating and thus increases the speed of operation of the cell.

REFERENCES:
patent: 4538244 (1985-08-01), Sugo et al.

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