Spin dependent conduction device

Details Spin dependent conduction device Spin dependent conduction device

1999-02-10

2000-05-30

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Magnetic thin film

365173, G11C 700

Patent

active

060698209

ABSTRACT:
A discrete energy levels are introduced in a ferromagnetic layer of a magnetic device, and tunnel current flows through a plurality of tunnel junctions. The tunnel junctions are disposed between first and second electrodes and the first ferromagnetic layer is interposed between the two tunnel junctions. Variations of the tunnel current depend on the relationship between magnetization directions of the ferromagnetic layer and another ferromagnetic layer. Tunnel current varies between parallel relation and anti-parallel relation.

REFERENCES:
patent: 5978257 (1999-11-01), Zhu et al.
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Jagadeesh S, Moodera, et al. "Ferromagnetic-Insulator-Ferromagnetic Tunneling: Spin-Dependent Tunneling And Large Magnetoresistance In Trilayer Junctions (Invited)", J. Appl. Phys., vol. 79 No. 8, Apr. 15, 1996, pp. 4724-4729.
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