Integrated circuit including vertical transistors with spacer ga

Details Integrated circuit including vertical transistors with spacer ga Integrated circuit including vertical transistors with spacer ga

1997-03-04

2000-05-30

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

438156, 438192, 438268, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

060693843

ABSTRACT:
Improvements in the compactness and performance of integrated circuit devices are gained through the fabrication of vertical transistors for which channel sizes are determined by the accuracy of etch techniques rather than the resolution of photolithographic techniques. A method of fabricating an integrated circuit includes forming a plurality of doped layers in a series of depths in a substrate wafer, and etching a trench in the substrate wafer. The trench extends through the doped layers at a plurality of depths and is bounded by vertical sidewalls and a planar horizontal floor. The method further includes forming a conductive sidewall spacer adjacent to the vertical sidewalls of the trench.

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