Semiconductor memory with sensing stability

Static information storage and retrieval – Addressing – Sync/clocking

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Details

36523008, 36518909, 36518501, G11C 1300

Patent

active

060260491

ABSTRACT:
A semiconductor memory employing an address transition detecting function includes an address transition detection circuit which generates a first signal when a transition of an address signal occurs. The memory also includes a clock circuit for generating a second signal in response to the first signal and a pumping circuit for generating a boosted voltage higher than a power supply voltage used in the memory in response to the second signal. The second signal is applied to the pumping circuit when the boosted voltage is below a predetermined value. In this way, a voltage required for a read operation is maintained at an acceptable level and read operation reliability is improved.

REFERENCES:
patent: 5337274 (1994-08-01), Ohji

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