Method of manufacturing an interconnect by dissolving an interme

Details Method of manufacturing an interconnect by dissolving an interme Method of manufacturing an interconnect by dissolving an interme

1997-12-22

2000-05-30

Fahmy, Wael

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438643, 438661, 438687, 438688, H01L 2144

Patent

active

060690712

ABSTRACT:
The intermetallic compound used to form a liner in the wiring of the semiconductor device is formed from a compound of a main component of the metal film used as the wiring and at least one metal material made to be dissolved in the main component to form a solid solution, or from a compound of at least two metal materials capable of forming a solid solution with the main component. The metal elements constituting the intermetallic compound are made to be dissolved in the metal film to form a solid solution during a heat treatment, and thus the barrier formed by the liner, which has been a problem studied to be solved, can be absent. Therefore, a semiconductor device excellent in resistance against electromigration and a highly reliable wiring process can be obtained.

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