Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-07-09
2000-02-15
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257288, 257296, 257336, 257344, 257346, 257350, 257368, 257374, 257377, 257387, 257389, 257408, H01L 2976
Patent
active
060256354
ABSTRACT:
A semiconductor apparatus formed on a semiconductor substrate includes a first active region in the substrate, and a second active region adjacent to the surface of the substrate separated from the first active region by a channel region. A gate oxide region may overlie at least a portion of the first and second active regions. The apparatus further includes a gate positioned over the channel region and having a first end and a second end respectively associated with the first and second active regions. The gate includes a first low conductive region and a second low conduction region at said first and second ends, respectively.
A method for making the transistor structure of the present invention is also provided. In one aspect, the invention comprises: forming a transistor region on a silicon substrate, the region including a first and second spacers on a first side and a second side of the region, respectively, the spacers overlying a first oxide layer on the surface of the substrate; etching the first oxide layer leaving a first and second gaps between the first and second spacers, respectively, and the silicon substrate; forming a gate oxide layer overlying the surface of the substrate in the transistor region, the gate oxide having a thickness; and filling the transistor region with polysilicon to cover the gate oxide region.
REFERENCES:
patent: 4735680 (1988-04-01), Yen
patent: 5571738 (1996-11-01), Krivokapic
patent: 5633522 (1997-05-01), Dorleans et al.
Denton, et al., Fully Depleted Dual-Gated Thin-Film SOI P-MOSFET's Fabricated in SOI Islands with an Isolated Buried Polysilicon Backgate, IEEE Electron Device Letters, vol. 17, No. 11, Nov. 1996.
Abraham Fetsum
Advanced Micro Devices , Inc.
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